C2712 Datasheet and Specifications PDF

The C2712 is a NPN EPITAXIAL SILICON TRANSISTOR.

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Part NumberC2712 Datasheet
ManufacturerWEJ
Overview NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILATOR OF FM/VHF TUNER High Current Gain Bandwidth Product fT=600MHz 2SC2715 SOT-23 1 1. 2.4 1.3 3 2 1.BASE 2.EMITTER 3.COLLECTOR 2.9 1. nA nA V PF MHz IC=100 A IE=0 IC=1mA IB=0 IE=100 A IC=0 VCB=12V, VE=0 VCB=3V, IC=0 VCB=5V, IC=1mA IC=10mA, IB=1mA VCB=10V, IE=10,f=1MHz VCE=5V, IC=5mA *Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25oC # Pulse Test: Pulse Width 300uS Duty cycle 2% DEVICE MARKING: 2SC2715=J8 .
Part NumberC2712 Datasheet
Description2SC2712
ManufacturerWeitron Technology
Overview 2SC2712 3 1 2 SOT-23 WEITRON 2SC2712 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Sym. 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.10 L 0.30 0.61 M 0.076 0.25 WEITRON .
Part NumberC2712 Datasheet
DescriptionSilicon NPN Transistors
ManufacturerToshiba
Overview Bipolar Transistors Silicon NPN Epitaxial Type 2SC2712 1. Applications • Low-Frequency Amplifiers • Audio Frequency General Purpose Amplifier Applications • AM Amplifiers 2. Features (1) AEC-Q101 qual. (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: VCEO = 50 V (3) High collector current: IC = 150 mA (max) (4) High hFE: hFE = 70 to 700 (5) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) (6) Low noise: NF = 1 dB (typ.), 10 dB (max) (7) C.