| Part Number | C30902E |
|---|---|
| Manufacturer | PerkinElmer Optoelectronics |
| Overview |
PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure. This structure provides high responsivity between 400 and 100.
* High Quantum Efficiency 77% Typical at 830 nm * C30902S and C30921S in Geiger Mode: Single-Photon Detection Probability to 50% Low Dark-Count Rate at 5% Detection Probability - Typically 15,000/second at +22°C 350/second at -25°C Count Rates to 2 x 106/second * Hermetically Sealed Package * Low No. |
C30902E Datasheet
The C30902E is a (C309xxx) Silicon Avalanche Photodiodes.
| Part Number | C30902E |
|---|---|
| Description | (C30xxx) PhotoDiode |
| Manufacturer | Perkin Elmer Optoelectronics |
| Overview | w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c . . |