Datasheet4U Logo Datasheet4U.com

C3198 Datasheet

The C3198 is a NPN Epitaxial Silicon Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberC3198
ManufacturerElite
Overview C3198 NPN Epitaxial Silicon Transistor Features Collector-Emitter Voltage: VCEO=50V Collector Dissipation: PC(max)=625mW TO-92 Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit. Collector-Emitter Voltage: VCEO=50V Collector Dissipation: PC(max)=625mW TO-92 Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperat.
Part NumberC3198
DescriptionNPN Silicon Transistor
ManufacturerSEMTECH
Overview ST 2SC3198 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On speci. IC=100mA, IB=10mA Base Emitter Saturation Voltage at IC=100mA, IB=10mA Collector Cutoff Current at VCB=60V Emitter Cutoff Current at VEB=5V Transition Frequency at VCE=10V, IE=1mA Collector Output Capacitance at VCB=10V, f=1MHz Base Intrinsic Resistance at VCB=10V IC=1mA, f=30MHz Noise Figure at VCE.
Part NumberC3198
DescriptionNPN Transistors
ManufacturerInchange Semiconductor
Overview ·High DC Current Gain-hFE=70-700@IC = 2mA ·Excellent hFE Linearity ·Excellent Safe Operating Area ·Low Noise ·Complement to Type 2SA1266 ·Minimum Lot-to-Lot variations for robust device performance an. tter Saturation Voltage IC= 100mA ; IB= 10mA ICBO Emitter Cutoff Current VCB= 60V; IE= 0 IEBO Collector Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 2mA ; VCE= 6V hFE-2 DC Current Gain IC= 150mA ; VCE= 6V fT Current-Gain—Bandwidth Product IC= 1mA; VCE= 10V; Cob Collector.
Part NumberC3198
DescriptionSilicon NPN Transistor
ManufacturerKEC
Overview . .