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C4002 Datasheet

The C4002 is a NPN Triple Diffused Planar Silicon Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberC4002
Manufactureronsemi
Overview 2SC4002 Ordering number : ENN2960A 2SC4002 NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • High breakdown voltage. • Adoption of MBIT process. • Excellent.
* High breakdown voltage.
* Adoption of MBIT process.
* Excellent hFE linearity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Te.
Part NumberC4002
Description2SC4002
ManufacturerSANYO
Overview Ordering number:EN2960 NPN Triple Diffused Planar Silicon Transistor 2SC4002 High-Voltage Driver Applications Features · High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity.
* High breakdown voltage.
* Adoption of MBIT process.
* Excellent hFE linearity. Package Dimensions unit:mm 2003B [2SC4002] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emit.
Part NumberC4002
DescriptionNPN Silicon Triple Diffused Planar Transistor
ManufacturerBluecolour
Overview 2SC4002 NPN Silicon Triple Diffused Planar Transistor for High-Voltage Driver Applications. The transistor is subdivided into two groups, D and E, according to its DC current gain. On special request,. dth Product at VCE=30V, IC=10mA Symbol hFE hFE ICBO IEBO VCE(sat) VBE(sat) fT Min. 60 100 - Typ. 70 Max. 120 200 0.1 0.1 0.6 1.0 - Unit μA μA V V MHz Page 2 of 2 7/15/2011 .
Part NumberC4002
DescriptionNPN Silicon Triple Diffused Planar Transistor
ManufacturerSEMTECH
Overview ST 2SC4002 NPN Silicon Triple Diffused Planar Transistor for High-Voltage Driver Applications. The transistor is subdivided into two groups, D and E, according to its DC current gain. On special reque. B=5mA Base Emitter Saturation Voltage at IC=50mA, IB=5mA Gain Bandwidth Product at VCE=30V, IC=10mA Symbol hFE hFE ICBO IEBO VCE(sat) VBE(sat) fT Min. 60 100 - G S P FORM A IS AVAILABLE Typ. 70 Max. 120 200 0.1 0.1 0.6 1.0 - Unit - µA µA V V MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech.