C4D08120A Datasheet and Specifications PDF

The C4D08120A is a Silicon Carbide Schottky Diode.

Key Specifications

PackageTO-220-2
Mount TypeThrough Hole
Pins2
Height19.431 mm
Max Operating Temp175 °C
Min Operating Temp-55 °C
Part NumberC4D08120A Datasheet
ManufacturerCree
Overview C4D08120A ® Silicon Carbide Schottky Diode VRRM = IF (TC=135˚C) Qc = 1200 V = 11 A 37 nC Z-Rec Rectifier Features Package • • • • • • 1.2kV Schottky Rectifier Zero Re. Package
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* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on VF TO-220-2 PIN 1 PIN 2 Benefits
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* Replace Bipolar with Unipolar Rectifier.
Part NumberC4D08120A Datasheet
Description8A Silicon Carbide Schottky Diode
ManufacturerWolfspeed
Overview With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reachin.
* Low Forward Voltage (VF) Drop with Positive Temperature Coefficient
* Zero Reverse Recovery Current / Forward Recovery Voltage
* Temperature-Independent Switching Behavior Typical Applications
* Industrial Switched Mode Power Supplies
* Uninterruptible & AUX Power Supplies
* Boost for PFC & DC-DC.

Price & Availability

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