| Part Number | C5198 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications 2SC5198 Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use i. hin the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start . |
C5198 Datasheet and Specifications PDF
The C5198 is a Silicon NPN Transistor.
Key Specifications
| Package | Axial |
|---|---|
| Max Operating Temp | 155 °C |
| Min Operating Temp | -55 °C |
| Part Number | C5198 Datasheet |
|---|---|
| Description | POWER TRANSISTORS |
| Manufacturer | Continental Device India |
| Overview | SYMBOL VCBO 160 Collector Base Voltage V 160 Collector Emitter Voltage CEO VEBO 5.0 Emitter Base Voltage Collector Current Base Current Total Power Dissipation up to Tc=25ºC Junction Temperature Stora. =5V IE=0, VCB=10V ,f=1MHz A1941 C5198 IC=1A, VCE=5V 55 - 110 CDIL C5198 R MIN TYP MAX 5.0 5.0 UNIT µΑ µΑ V V V 160 2.0 1.5 200 55 35 480 220 30 pF MHz Transition Frequency * hFE Classification Marking fT R: CDIL A1941 R CDIL A1941 O O : 80 - 200 CDIL C5198 O A1941_C5198_9TWRev_2 250706E. |