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CES2302 Datasheet

The CES2302 is a N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberCES2302
ManufacturerVBsemi
Overview CES2302-VB CES2302-VB Datasheet N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 at VGS = 2.5 V 0.050 at VGS = 1.8 V ID (A)e 6a 6a.
* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* DC/DC Converters
* Load Switch for Portable Applications ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-So.
Part NumberCES2302
DescriptionN-Channel MOSFET
ManufacturerChino-Excel Technology
Overview N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 3.0A, RDS(ON) = 72mΩ @VGS = 4.5V. RDS(ON) = 110mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Lead free product is a. 20V, 3.0A, RDS(ON) = 72mΩ @VGS = 4.5V. RDS(ON) = 110mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. Rugged and reliable. SOT-23 package. CES2302 D D G SOT-23 G S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain.