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CES2336 Datasheet

The CES2336 is a N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberCES2336
ManufacturerChino-Excel Technology
Overview N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 1.8A, RDS(ON) = 250mΩ @VGS = 10V. RDS(ON) = 330mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. L. 60V, 1.8A, RDS(ON) = 250mΩ @VGS = 10V. RDS(ON) = 330mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. CES2336 PRELIMINARY D G D G SOT-23 S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Vo.
Part NumberCES2336
DescriptionN-Channel 60V MOSFET
ManufacturerVBsemi
Overview CES2336-VB CES2336-VB Datasheet N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.075 at VGS = 10 V 60 0.086 at VGS = 4.5 V ID (A)a 4.0 3.8 Qg (Typ.) 2.1 nC TO-.
* Halogen-free According to IEC 61249-2-21 Available
* Trench Power MOSFET
* 100 % Rg Tested
* 100 % UIS Tested APPLICATIONS
* Battery Switch
* DC/DC Converter D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Vol.