CGHV1F006S Datasheet and Specifications PDF

CGHV1F006S 6 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wi.

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Wolfspeed’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device .

for 40 V in CGHV1F006S-AMP
* Up to 15 GHz Operation
* 8 W Typical Output Power
* 17 dB Gain at 6.0 GHz
* 15 dB Gain at 9.0 GHz
* Application circuits for 5.8 - 7.2 GHz, 7.9 - 8.4GHz, and 8.5 - 9.6 GHz.
* High degree of APD and DPD correction can be applied Typical Performance Over 5.5 - 6.5 GHz (T.