CGHV1J070D Datasheet
CGHV1J070D Datasheet (Cree)
Cree
CGHV1J070D 70 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length f.
It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.
PN: CGHV1J070D
FEATURES
* 17 dB Typ. Small Signal Gain at 10 GHz
* 60% Typ. PAE at 10 GHz
* 70 W Typical Psat
* 40 V Operation
* Up to 18GHz Operation
APPLICATIONS
* Satellite C.
CGHV1J070D Datasheet (Wolfspeed)
Wolfspeed
Cree’s CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. This GaN-on-SiC prod.
It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.
PN: CGHV1J070D
Features
* 17 dB Typ. Small Signal Gain at 10 GHz
* 60% Typ. PAE at 10 GHz
*
*
70 W Typical PSAT 40 V Operation
* Up to 18 GHz Operation
Applications
* Satellite C.