| Part Number | CGHV59350 |
|---|---|
| Manufacturer | Cree |
| Overview |
R1 RES, 5.1OHM, +/- 1%, 1/16W,0603 R2 RES, 10OHM, +/- 1%, 1/16W,0603
C1,C2
CAP, 5.6pF, +/- 0.25 pF,250V, 0603
C3,C8
CAP, 20pF, +/- 0.25 pF,250V, 0603
C4,C9
CAP, 470PF, 5%, 100V, 0603, X
C5 CAP.
* 5.2 - 5.9 GHz Operation * 450 W Typical Output Power * 10.5 dB Power Gain * 55% Typical Drain Efficiency * 50 Ohm Internally Matched * <0.3 dB Pulsed Amplitude Droop Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating U. |
CGHV59350 Datasheet
The CGHV59350 is a GaN HEMT.
| Part Number | CGHV59350 |
|---|---|
| Description | GaN HEMT |
| Manufacturer | Wolfspeed |
| Overview |
Wolfspeed's CGHV59350 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV593.
* 5.2 - 5.9 GHz Operation * 470 W Typical Output Power * 10.7 dB Power Gain * 60% Typical PAE * 50 Ohm Internally Matched * <0.3 dB Pulsed Amplitude Droop PN: CGHV59350F and CGHV59350P Package Type: 440217 and 440218 Typical Performance Over 5.2 - 5.9 GHz (TC = 25˚C) of Demonstration Amplifier Pa. |