| Part Number | CLA50E1200HB |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·With TO-247 packaging ·Long-term stability ·Thyristor for line frequency ·Planar passivated chip ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Swi. A IGT Gate-trigger current VD = 6V VGT Gate-trigger voltage VD = 6V Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.05 4 mA 1.85 V 1.6 mA 1.5 V 0.25 ℃/W isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor CLA50E1200HB. |