CPH3356 Datasheet and Specifications PDF

Ordering number : ENA1124 CPH3356 SANYO Semiconductors DATA SHEET CPH3356 Features • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications 1.8V drive H.

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* P-Channel Silicon MOSFET General-Purpose Switching Device Applications 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power .

CPH3356 Power MOSFET –20V, 137mΩ, –2.5A, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on .

* Low On-Resistance
* 1.8V drive
* ESD Diode-Protected Gate
* Pb-Free, Halogen Free and RoHS compliance Typical Applications
* Load Switch
* Motor Driver SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage VDSS
*20 V Gate to Sour.