CPH3360 Datasheet and Specifications PDF

Ordering number : ENA0114 CPH3360 SANYO Semiconductors DATA SHEET CPH3360 Features • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistanc.

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* P-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=233mΩ(typ.) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) All.

CPH3360 Power MOSFET –30V, 303mΩ, –1.6A, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on .

* High Speed Switching
* 4V drive
* Pb-Free, Halogen Free and RoHS compliance Typical Applications
* DC/DC Converter SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2) Parameter Symbol Value Unit Drain to Source Voltage VDSS
*30 V Gate to Source Voltage VGSS ±20 V Drain Cur.