| Part Number | D1047 |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview |
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
3 2 1
TO-3P
Figure 1. .
* High breakdown voltage VCEO = 140 V * Typical ft = 20 MHz * Fully characterized at 125 oC Application * Power supply Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity beh. |