Datasheet4U Logo Datasheet4U.com

D44C11 Datasheet

The D44C11 is a Silicon NPN Power Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberD44C11
ManufacturerInchange Semiconductor
Overview ·Low Saturation Voltage ·Good Linearity of hFE ·Fast Switching Speeds ·Complement to Type D45C11 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Desi. stance, Junction to Case MAX UNIT 4.2 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors D44C11 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCE(sat) Collector-Emitter Satura.
Part NumberD44C11
DescriptionSilicon NPN Power Transistors
ManufacturerSavantic
Overview ·With TO-220 package ·Complement to type D45C Series ·Very low collector saturation voltage ·Fast switching APPLICATIONS ·Designed for various specific and general purpose application ·Shunt and switc. antIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER D44C2,3,5,6,8,9,11,12 D44C1,4,7,10 CONDITIONS IC=1A ;IB=50mA MIN SYMBOL D44C Series TYP. MAX UNIT VCEsat Collector-emitter saturation voltage 0.5 IC=1A ;IB=0.1A.
Part NumberD44C11
DescriptionSilicon NPN Transistor
ManufacturerNTE Electronics
Overview The D44C11 silicon NPN transistors in a TO−220 type package designed for various specific and general purpose amplifications such as output and driver stages of amplifiers operating at frequencies fr. D Very Low Collector−Emitter Saturation Voltage D excellent Linearity D Fast Switching Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Emitter Voltage, VCES . . . . . .
Part NumberD44C11
DescriptionSILICON NPN POWER TRANSISTORS
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR D44C series devices are silicon NPN power transistors designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATI. EO IC=100mA (D44C10, 11, 12) 80 VCE(SAT) IC=1.0A, IB=50mA (D44C2, 3, 5, 6, 8, 9, 11, 12) VCE(SAT) VBE(SAT) Cob fT td+tr ts tf IC=1.0A, IB=100mA (D44C1, 4, 7, 10) IC=1.0A, IB=100mA VCB=10V, IE=0, f=1.0MHz VCE=4.0V, IC=20mA IC=1.0A, IB1=100mA IC=1.0A, IB1=IB2=100mA IC=1.0A, IB1=IB2=100mA 50 100.