D44C8 Datasheet
D44C8 Datasheet (Central Semiconductor)
Central Semiconductor
The CENTRAL SEMICONDUCTOR D44C series devices are silicon NPN power transistors designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATI.
EO IC=100mA (D44C10, 11, 12) 80 VCE(SAT) IC=1.0A, IB=50mA (D44C2, 3, 5, 6, 8, 9, 11, 12) VCE(SAT) VBE(SAT) Cob fT td+tr ts tf IC=1.0A, IB=100mA (D44C1, 4, 7, 10) IC=1.0A, IB=100mA VCB=10V, IE=0, f=1.0MHz VCE=4.0V, IC=20mA IC=1.0A, IB1=100mA IC=1.0A, IB1=IB2=100mA IC=1.0A, IB1=IB2=100mA 50 100.
D44C8 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Low Saturation Voltage ·Good Linearity of hFE ·Fast Switching Speeds ·Complement to Type D45C8 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Desig.
ance, Junction to Case MAX UNIT 4.2 ℃/W isc website： 1 isc & iscsemi is registered tradema isc Silicon NPN Power Transistors D44C8 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCE(sat) Collector-Emitter Saturation.
D44C8 Datasheet (Savantic)
Savantic
·With TO-220 package ·Complement to type D45C Series ·Very low collector saturation voltage ·Fast switching APPLICATIONS ·Designed for various specific and general purpose application ·Shunt and switc.
antIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER D44C2,3,5,6,8,9,11,12 D44C1,4,7,10 CONDITIONS IC=1A ;IB=50mA MIN SYMBOL D44C Series TYP. MAX UNIT VCEsat Collector-emitter saturation voltage 0.5 IC=1A ;IB=0.1A.