| Part Number | D44H10 Datasheet |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by D44H/D Complementary Silicon Power Transistors . . . for general purpose power amplification and switching such as output or driver stag. ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ . |
D44H10 Datasheet and Specifications PDF
The D44H10 is a 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS.
| Part Number | D44H10 Datasheet |
|---|---|
| Description | Silicon NPN Power Transistors |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low Saturation Voltage ·Fast Switching Speeds ·Complement to Type D45H10 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpos. D44H10 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 8A ;IB= 0.8 A VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 8A ;IB= 0.8 A VCE=Rated . |
| Part Number | D44H10 Datasheet |
|---|---|
| Description | Complementary Silicon Power Transistors |
| Manufacturer | onsemi |
| Overview |
D44H Series (NPN), D45H Series (PNP)
Preferred Devices
Complementary Silicon Power Transistors
These series of plastic, silicon NPN and PNP power transistors can be used as gener.
* Low Collector *Emitter Saturation Voltage * Fast Switching Speeds * Complementary Pairs Simplifies Designs * Pb *Free Packages are Available* MAXIMUM RATINGS Rating Collector *Emitter Voltage D44H8, D45H8 D44H11, D45H11 Emitter Base Voltage Collector Current * Continuous * Peak (No. |
| Part Number | D44H10 Datasheet |
|---|---|
| Description | Bipolar Transistor |
| Manufacturer | Multicomp |
| Overview |
Plastic NPN TO-220 silicon power transistor is designed for various specific and general purpose applications such as output and driver stages of amplifiers operating at frequencies from DC to greate.
* Very low collector saturation voltage * Excellent linearity * Fast switching NPN Emitter 3 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Base Current Total Device Dissipation at Tc = 25°C Derate above 25°. |