| Part Number | D478 Datasheet |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| Overview | The AOD478/AOI478 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for co. =70°C PDSM 2.1 1.3 Junction and Storage Temperature Range TJ, TSTG -55 to 175 G D S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 17 55 2.7 Max 25 60 3.3 G S. |
D478 Datasheet and Specifications PDF
The D478 is a AOD478.
| Part Number | D478 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | VBsemi |
| Overview |
D478-VB
D478-VB Datasheet
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () 0.114 at VGS = 10 V
ID (A) 15
D TO-252
FEATURES • TrenchFET® Power MOSFET • 150 °C.
* TrenchFET® Power MOSFET * 150 °C Junction Temperature * PWM Optimized * 100 % Rg Tested * Compliant to RoHS Directive 2002/95/EC APPLICATIONS * Primary Side Switch G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage . |
| Part Number | D478 Datasheet |
|---|---|
| Description | 2SD478 |
| Manufacturer | SavantIC |
| Overview | ·With TO-220C package ·Complement to type 2SB568 APPLICATIONS ·Low frequency high voltage power amplifier TV vertical deflection output PINNING PIN 1 2 3 Base Collector;connected . Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=50mA; RBE=: IE=5mA; IC=0 IC=0.5 A;IB=50m A IC=50mA ; VCE=4V VCB=120V; IE=0 VEB=4V; IC=0 IC=50mA ; VCE=4V IC=0.5A ; VCE=10V 60 60 MIN 150 6 TYP. 2SD478 SYMBOL V(B. |