DMJ70H900HJ3 Datasheet
DMJ70H900HJ3 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-C.
*Drain Current
*ID= 7.0A@ TC=25℃
*Drain Source Voltage-
: VDSS= 700V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 0.9Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
*Designed for use in switch mode power supplies a.
DMJ70H900HJ3 Datasheet (Diodes Incorporated)
Diodes Incorporated
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management application.
and Benefits
* Low On-Resistance
* High BVDSS Rating for Power Application
* Low Input Capacitance
* Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)).