DMN3009SK3 Datasheet and Specifications PDF

and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power managem.

* Low On-Resistance
* Low Input Capacitance
* Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qualified to AEC-Q101 Standards for High Reliability Description and Applications This new generation MOSFET is designed to minimize the on-state resis.

·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-C.

*Drain Current
*ID= 80A@ TC=25℃
*Drain Source Voltage- : VDSS= 30V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 5.5mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplies an.