ECH8663R Datasheet and Specifications PDF

DATA SHEET MOSFET – Power, N-Channel, Dual ECH8 30 V, 8 A, 20.5 mW ECH8663R VDSS 30 V RDS(on) MAX 20.5 mW @ 4.5 V 21 mW @ 4.0 V 23 mW @ 3.1 V 28 mW @ 2.5 V ID MAX 8A Features • Low.

* Low ON
*resistance
* 2.5 V Drive
* Common
*drain Type
* Protection Diode in
* Built
*in Gate Protection Resistor
* Best Suited for LiB Charging and Discharging Switch
* Halogen Free Compliance Specifications ABSOLUTE MAXIMUM RATINGS (at Ta = 25°C) Parameter Symbol Conditions Ratings Unit Drain
*.

Ordering number : ENA1184 ECH8663R SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8663R Features • • • • • • General-Purpose Switching Device Applications Low O.

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* General-Purpose Switching Device Applications Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source.