The ECH8667 is a -30V -5.5A P-Channel Power MOSFET.
| Package | SMD/SMT |
|---|---|
| Pins | 8 |
| Height | 900 µm |
| Length | 2.9 mm |
| Width | 2.3 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
onsemi
Ordering number : ENA1778A ECH8667 P-Channel Power MOSFET –30V, –5.5A, 39mΩ, Dual ECH8 Features • ON-resistance RDS(on)1=30mΩ(typ.) • 4V drive • Halogen free compliance • Protecti.
* ON-resistance RDS(on)1=30mΩ(typ.)
* 4V drive
* Halogen free compliance
* Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel .
SANYO
Ordering number : ENA1778 ECH8667 SANYO Semiconductors DATA SHEET ECH8667 Features • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistanc.
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P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
ON-resistance RDS(on)1=30mΩ(typ.) 4V drive Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allo.
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Newark | 43 | 1+ : 1.45 USD 10+ : 0.963 USD 25+ : 0.868 USD 50+ : 0.774 USD |
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| Newark | 0 | 3000+ : 0.528 USD 6000+ : 0.497 USD 12000+ : 0.473 USD 18000+ : 0.45 USD |
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| Verical | 2250 | 822+ : 0.4568 USD 1000+ : 0.4213 USD 10000+ : 0.3755 USD 100000+ : 0.3146 USD |
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