EKI04047 Datasheet and Specifications PDF

40 V, 80 A, 4.1 mΩ Low RDS(ON) N ch Trench Power MOSFET EKI04047 Features  V(BR)DSS --------------------------------- 40 V (ID = 100 µA)  ID --------------------------------------------------------.

* V(BR)DSS
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*- 40 V (ID = 100 µA)
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* 80 A
* RDS(ON)
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*5.2 mΩ max. (VGS = 10 V, ID = 42.8 A)
* Qg
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*16.0 nC (VGS = 4.5 V, VDS = 20 V, ID = 42.8 A)
* Low Total Gate Charge
* High Speed Switching
* Low.

·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source .

*Drain Current
*ID=80A@ TC=25℃
*Drain Source Voltage- : VDSS=40V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 5.2mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplies and .