ESH3B Datasheet and Specifications PDF

AEC-Q101 qualified Green compound 2 Version:H1903 ESH3B - ESH3D Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) AVERAGE FORWARD CURRENT (A) Fig.1 Forward Current D.

* Glass passivated chip junction
* Ideal for automated placement
* Low profile package
* Ultra fast recovery time for high efficiency
* Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
* Halogen-free according to IEC 61249-2-21 APPLICATIONS
* High frequency rectification
*.

ESH3B, ESH3C, ESH3D Vishay General Semiconductor Surface-Mount Ultrafast Plastic Rectifier SMC (DO-214AB) Cathode Anode LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHAR.

* Glass passivated pellet chip junction Available
* Ideal for automated placement
* Ultrafast recovery times for high efficiency
* Low forward voltage, low power loss
* High forward surge capability
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
* AEC-Q101 qualified
* Materia.