F1006 Datasheet and Specifications PDF

The F1006 is a RF POWER VDMOS TRANSISTOR.

Part NumberF1006 Datasheet
ManufacturerPolyfet RF Devices
Overview Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver a. gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1006 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 120 Watts Single Ended Package Style AV HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM.

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