| Part Number | FCD850N80Z Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤850mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and .
*Static drain-source on-resistance: RDS(on)≤850mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Power supply *LED lighting *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source . |
FCD850N80Z Datasheet and Specifications PDF
The FCD850N80Z is a N-Channel MOSFET.
Key Specifications
| Package | DPAK |
|---|---|
| Mount Type | Surface Mount |
| Height | 2.517 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | FCD850N80Z Datasheet |
|---|---|
| Description | MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate c.
* Typ. RDS(on) = 710 mTyp.) * Ultra Low Gate Charge (Typ. Qg = 22 nC) * Low Eoss (Typ. 2.3 uJ @ 400V) * Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF) * 100% Avalanche Tested * RoHS Compliant * ESD Improved Capability Applications Description SuperFET® II MOSFET is Fairchild Semicon. |