FDB035N10A Datasheet
FDB035N10A Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performan.
* RDS(on) = 3.0 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A
* Fast Switching Speed
* Low Gate Charge, QG = 89 nC ( Typ.)
* High Performance Trench Technology for Extremely Low
RDS(on)
* High Power and Current Handling Capability
* RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild .
FDB035N10A Datasheet (onsemi)
onsemi
This N−Channel MOSFET is produced using onsemi’s advance POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance. Features • RDS.
* RDS(on) = 3.0 mW ( Typ.) @ VGS = 10 V, ID = 75 A
* Fast Switching Speed
* Low Gate Charge, QG = 89 nC ( Typ.)
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability
* RoHS Compliant
Applications
* Synchronous Rectification for ATX / Server / Tel.