| Part Number | FDB045AN08A0 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
FDB045AN08A0 — N-Channel PowerTrench® MOSFET
FDB045AN08A0
N-Channel PowerTrench® MOSFET
75 V, 80 A, 4.5 mΩ
Features
• RDS(on) = 3.9 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A • QG(tot) = 92 nC ( Typ.) @ VGS.
* RDS(on) = 3.9 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A * QG(tot) = 92 nC ( Typ.) @ VGS = 10 V * Low Miller Charge * Low Qrr Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) Applications * Synchronous Rectification for ATX / Server / Telecom PSU * Battery Protection Circuit * Motor drives. |
FDB045AN08A0 Datasheet and Specifications PDF
The FDB045AN08A0 is a N-Channel MOSFET.
Key Specifications
| Package | D2PAK |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 5.08 mm |
| Length | 10.67 mm |
| Width | 11.33 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | FDB045AN08A0 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
FDB045AN08A0
April 2002
FDB045AN08A0
N-Channel UltraFET® Trench MOSFET 75V, 80A, 4.5mΩ
Features
• r DS(ON) = 3.9mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 92nC (Typ.), VGS = 10V • Low Miller Charge.
* r DS(ON) = 3.9mΩ (Typ.), V GS = 10V, ID = 80A * Qg(tot) = 92nC (Typ.), VGS = 10V * Low Miller Charge * Low Qrr Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) * Qualified to AEC Q101 Formerly developmental type 82684 Applications * 42V Automotive Load Control * Starter / Alternato. |