| Part Number | FDD3670 Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature fas.
* 34 A, 100 V. RDS(ON) = 0.030 Ω @ VGS = 10 V RDS(ON) = 0.033 Ω @ VGS = 6 V * Low gate charge (57 nC typical) * Fast switching speed * High performance trench technology for extremely low RDS(ON) * High power and current handling capability. D D G S TO-252 S G Absolute Maximum Ratings Symbol VDS. |
FDD3670 Datasheet and Specifications PDF
The FDD3670 is a 100V N-Channel PowerTrench MOSFET.
Key Specifications
| Package | TO-252 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 2.517 mm |
| Length | 6.73 mm |
| Width | 6.22 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | FDD3670 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | onsemi |
| Overview | This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs f eature fa. General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs f eature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON). |