FDD5614P Datasheet PDF

The FDD5614P is a 60V P-Channel PowerTrench MOSFET.

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Part NumberFDD5614P Datasheet
ManufacturerFairchild Semiconductor
Overview This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Applications • DC/DC converter • Power management • Load switch F.
*
*15 A,
*60 V. RDS(ON) = 100 mΩ @ VGS =
*10 V RDS(ON) = 130 mΩ @ VGS =
*4.5 V
* Fast switching speed
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability D G S TO-252 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS I.
Part NumberFDD5614P Datasheet
DescriptionP-Channel MOSFET
Manufactureronsemi
Overview This 60 V P−Channel MOSFET uses onsemi’s high voltage POWERTRENCH process. It has been optimized for power management applications. Features • −15 A, −60 V ♦ RDS(ON) = 100 mW at VGS = −10 V ♦ RDS(ON) .
*
*15 A,
*60 V
* RDS(ON) = 100 mW at VGS =
*10 V
* RDS(ON) = 130 mW at VGS =
*4.5 V
* Fast Switching Speed
* High Performance Trench Technology for Extremely Low RDS(ON)
* High Power and Current Handling Capability
* This is a Pb
*Free Device Applications
* DC/DC Converter
* Power Management
* Load S.
Part NumberFDD5614P Datasheet
DescriptionP-Channel MOSFET
ManufacturerVBsemi
Overview FDD5614P FDD5614P Datasheet P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) 0.061 at V GS = - 10 V 0.072 at VGS = - 4.5 V ID (A) - 30 - 25 Qg (Typ) 10 FEATURES • TrenchFET.
* TrenchFET® Power MOSFET
* 100 % UIS Tested APPLICATIONS
* Load Switch www.VBsemi.com TO-252 S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °.