FDG6303N Datasheet and Specifications PDF

The FDG6303N is a Dual N-Channel Digital FET.

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Part NumberFDG6303N Datasheet
Manufactureronsemi
Overview These dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tai.
* 25 V, 0.50 A Continuous, 1.5 A Peak  RDS(ON) = 0.45 W @ VGS = 4.5 V  RDS(ON) = 0.60 W @ VGS = 2.7 V
* Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.5 V)
* Gate
*Source Zener for ESD Ruggedness (>6 kV Human Body Model)
* Compact Industry Standard SC7.
Part NumberFDG6303N Datasheet
DescriptionDual N-Channel Digital FET
ManufacturerFairchild Semiconductor
Overview These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially . 25 V, 0.50 A continuous, 1.5 A peak. RDS(ON) = 0.45 Ω @ VGS= 4.5 V, RDS(ON) =0.60 Ω @ VGS= 2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). Compact industry standard SC70-6 surface.