FDG6322C Datasheet and Specifications PDF

Package	SC
Mount Type	Surface Mount
Pins	6
Height	1.1 mm
Length	2 mm
Width	1.25 mm
Max Operating Temp	150 °C
Min Operating Temp	-55 °C

Package

Mount Type

Surface Mount

Pins

Height

1.1 mm

Length

2 mm

Width

1.25 mm

Max Operating Temp

150 °C

Min Operating Temp

-55 °C

Part Number	FDG6322C Datasheet
Manufacturer	onsemi
Overview	These dual N & P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is . N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 Ω @ VGS= 4.5 V, RDS(ON) = 5.0 Ω @ VGS= 2.7 V. P-Ch -0.41 A,-25V, RDS(ON) = 1.1 Ω @ VGS= -4.5V, RDS(ON) = 1.5 Ω @ VGS= -2.7V. Very small package outline SC70-6. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-So.

Part Number

FDG6322C Datasheet

Description

Dual N & P Channel Digital FET

Manufacturer

Fairchild Semiconductor

Overview

These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especia. N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 Ω @ VGS= 4.5 V, RDS(ON) = 5.0 Ω @ VGS= 2.7 V. P-Ch -0.41 A,-25V, RDS(ON) = 1.1 Ω @ VGS= -4.5V, RDS(ON) = 1.5 Ω @ VGS= -2.7V. Very small package outline SC70-6. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-So.

Price & Availability

Seller	Inventory	Price Breaks	Buy
Rochester Electronics	6	100+ : 0.1697 USD 500+ : 0.1527 USD 1000+ : 0.1409 USD 10000+ : 0.1256 USD	View Offer
Flip Electronics	9000	-	View Offer
Newark	0	3000+ : 0.212 USD 6000+ : 0.205 USD 12000+ : 0.198 USD 18000+ : 0.189 USD	View Offer