FDH3632 Datasheet and Specifications PDF

The FDH3632 is a 100V 80A N-Channel MOSFET.

Key Specifications

PackageTO-247-3
Mount TypeThrough Hole
Pins3
Height24.75 mm
Length6.35 mm
Width6.35 mm
Max Operating Temp175 °C
Min Operating Temp-55 °C
Datasheet4U Logo
Part NumberFDH3632 Datasheet
Manufactureronsemi
Overview DATA SHEET MOSFET – Power, N-Channel, POWERTRENCH) VDSS 100 V RDS(ON) MAX 9 mW ID MAX 80 A 100 V, 80 A, 9 mW D FDH3632, FDP3632, FDB3632 Features • RDS(ON) = 7.5 mW (Typ.), VGS .
* RDS(ON) = 7.5 mW (Typ.), VGS = 10 V, ID = 80 A
* Qg (tot) = 84 nC (Typ.), VGS = 10 V
* Low Miller Charge
* Low Qrr Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* These Devices are Pb
*Free and are RoHS Compliant Applications
* Synchronous Rectification
* Battery Protection Circui.
Part NumberFDH3632 Datasheet
DescriptionN-Channel MOSFET
ManufacturerFairchild Semiconductor
Overview FDB3632 / FDP3632 / FDI3632 / FDH3632 November 2004 FDB3632 / FDP3632 / FDI3632 / FDH3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ Features • rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot.
* rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A
* Qg(tot) = 84nC (Typ.), VGS = 10V
* Low Miller Charge
* Low QRR Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101 Applications
* DC/DC converters and Off-Line UPS
* Distributed Power Architectures and VRMs
* Primar.
Part NumberFDH3632 Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·Drain Source Voltage- : VDSS ≥100V ·Static drain-source on-resistance: RDS(on) ≤ 9mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-L.
*With TO-247 packaging
*Drain Source Voltage- : VDSS ≥100V
*Static drain-source on-resistance: RDS(on) ≤ 9mΩ@VGS=10V
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Power supply
*Switching applications
*ABSOLUTE MAXIMUM RATI.

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