| Part Number | FDMA507PZ Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable applications. It features a MOSFET with low on−stade resistance.
The MicroFET t 2x.
a MOSFET with low on *stade resistance. The MicroFET t 2x2 package offers exceptional thermal perfomance for its physical size and is well suited to linear mode applications. Features * Max rDS(on) = 24 mW at VGS = *5 V, ID = *7.8 A * Max rDS(on) = 25 mW at VGS = *4.5 V, ID = *7 A * Max rDS(on) = 35 . |
FDMA507PZ Datasheet and Specifications PDF
The FDMA507PZ is a P-Channel MOSFET.
Key Specifications
| Mount Type | Surface Mount |
|---|---|
| Pins | 6 |
| Height | 800 µm |
| Length | 2 mm |
| Width | 2 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | FDMA507PZ Datasheet |
|---|---|
| Description | Single P-Channel PowerTrench MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-stade resistance. The MicroFET 2X2 .
* Max rDS(on) = 24 mΩ at VGS = -5 V, ID = -7.8 A * Max rDS(on) = 25 mΩ at VGS = -4.5 V, ID = -7 A * Max rDS(on) = 35 mΩ at VGS = -2.5 V, ID = -5.5 A * Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -4 A * Low Profile - 0.8 mm maximum - in the package MicroFET 2X2 mm * HBM ESD protection level > 3.2K V ty. |