| Part Number | FDMS0312AS Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
The FDMS0312AS has been designed to minimize losses in power
conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) while maintain.
* Max RDS(on) = 5.0 mW at VGS = 10 V, ID = 18 A * Max RDS(on) = 6.2 mW at VGS = 4.5 V, ID = 16 A * Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency * SyncFET Schottky Body Diode * MSL1 Robust Package Design * 100% UIL Tested * This Device is Pb *Free, Halide Free and is Ro. |
FDMS0312AS Datasheet and Specifications PDF
The FDMS0312AS is a N-Channel MOSFET.
| Part Number | FDMS0312AS Datasheet |
|---|---|
| Description | MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 6.2 mΩ at VGS = 4.5 V, ID = 16 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
SyncFET Schottky Body.
General Description
* Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 18 A * Max rDS(on) = 6.2 mΩ at VGS = 4.5 V, ID = 16 A * Advanced Package and Silicon combination for low rDS(on) and high efficiency * SyncFET Schottky Body Diode * MSL1 robust package design * 100% UIL tested * RoHS Compliant The FDM. |