| Part Number | FDMS3669S Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
Asymmetric Dual N-Channel MOSFET Features
Q1: N-Channel Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A
Q2: N-Channel Max rDS(on) = 5 mΩ at VGS = 10.
Q1: N-Channel * Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A * Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel * Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A * Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A * Low inductance packaging shortens rise/fall times, resulting in lower switchin. |
FDMS3669S Datasheet and Specifications PDF
The FDMS3669S is a Dual N-Channel MOSFET.
| Part Number | FDMS3669S Datasheet |
|---|---|
| Description | MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The co.
Q1: N-Channel * Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A * Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel * Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A * Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A * Low inductance packaging shortens rise/fall times, resulting in lower switchin. |