FDMS7608S Datasheet
FDMS7608S Datasheet (VBsemi)
VBsemi
FDMS7608S-VB FDMS7608S-VB Datasheet Dual N-Channel 30V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0034 at VGS = 10 V 30 0.0043 at VGS = 4.5 V ID (A) 60 55 Qg (Typ.) 17 nC.
* Halogen-free According to IEC 61249-2-21
Definition
* TrenchFET® Power MOSFET
* 100 % UIS Tested
* 100 % Rg Tested
* Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
* Set Top Box
* Low Current DC/DC
PHASE
Top View
Bottom View
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Par.
FDMS7608S Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
Q1: N-Channel Max rDS(on) = 10.0 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 13.6 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 15 A Max rDS(on) = 7.2 mΩ a.
General Description
Q1: N-Channel
* Max rDS(on) = 10.0 mΩ at VGS = 10 V, ID = 12 A
* Max rDS(on) = 13.6 mΩ at VGS = 4.5 V, ID = 10 A
Q2: N-Channel
* Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 15 A
* Max rDS(on) = 7.2 mΩ at VGS = 4.5 V, ID = 13 A
* RoHS Compliant
This device includes two specialized.