| Part Number | FDN335N |
|---|---|
| Manufacturer | onsemi |
| Overview |
This N−Channel 2.5 V specified MOSFET is produced using
onsemi advanced POWERTRENCH® process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for .
* 1.7 A, 20 V * RDS(ON) = 0.07 W @ VGS = 4.5 V * RDS(ON) = 0.1 W @ VGS = 2.5 V * Low Gate Charge (3.5 nC typical) * High Performance Trench Technology for Extremely Low RDS(ON) * High Power and Current Handling Capability * This Device is Pb *Free and is RoHS Compliant Applications * DC *DC Converter . |