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FDN335N Datasheet

The FDN335N is a N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberFDN335N
Manufactureronsemi
Overview This N−Channel 2.5 V specified MOSFET is produced using onsemi advanced POWERTRENCH® process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for .
* 1.7 A, 20 V
* RDS(ON) = 0.07 W @ VGS = 4.5 V
* RDS(ON) = 0.1 W @ VGS = 2.5 V
* Low Gate Charge (3.5 nC typical)
* High Performance Trench Technology for Extremely Low RDS(ON)
* High Power and Current Handling Capability
* This Device is Pb
*Free and is RoHS Compliant Applications
* DC
*DC Converter .
Part NumberFDN335N
DescriptionN-Channel MOSFET
ManufacturerFairchild Semiconductor
Overview This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low.
*
*
* 1.7 A, 20 V. RDS(ON) = 0.07 Ω @ VGS = 4.5 V RDS(ON) = 0.100 Ω @ VGS = 2.5 V. Low gate charge (3.5nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. Applications
* DC/DC converter
* Load switch
* D D S SuperSOT -3 TM G TA.