FDP2532 Datasheet and Specifications PDF

The FDP2532 is a N-Channel MOSFET.

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Part NumberFDP2532 Datasheet
Manufactureronsemi
Overview MOSFET – N-Channel, POWERTRENCH) 150 V, 79 A, 16 mW FDP2532, FDB2532 Features • RDS(on) = 14 mW (Typ.) @ VGS = 10 V, ID = 33 A • QG(tot) = 82 nC (Typ.) @ VGS = 10 V • Low Miller Charge • Low Qrr Body.
* RDS(on) = 14 mW (Typ.) @ VGS = 10 V, ID = 33 A
* QG(tot) = 82 nC (Typ.) @ VGS = 10 V
* Low Miller Charge
* Low Qrr Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* These Devices are Pb
*Free, Halide Free and are RoHS Compliant Applications
* Consumer Appliances
* Synchronous Rectif.
Part NumberFDP2532 Datasheet
DescriptionN-Channel MOSFET
ManufacturerFairchild Semiconductor
Overview FDB2532 / FDP2532 / FDI2532 August 2002 FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ Features • r DS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A • Qg(tot) = 82nC (Typ.), VGS .
* r DS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A
* Qg(tot) = 82nC (Typ.), VGS = 10V
* Low Miller Charge
* Low QRR Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101 Formerly developmental type 82884 Applications
* DC/DC converters and Off-Line UPS
* Distributed Pow.
Part NumberFDP2532 Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot var.
*With TO-220 packaging
*High speed switching
*Low gate input resistance
*Standard level gate drive
*Easy to use
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Power supply
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(T.