The FDP2614 is a 200V N-Channel MOSFET.
| Package | TO-220 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 20.4 mm |
| Length | 10.67 mm |
| Width | 4.83 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | FDP2614 Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performan.
* RDS(on) = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A * Fast Switching Speed * Low Gate Charge * High Performance Trench technology for Extremely Low RDS(on) * High Power and Current Handing Capability * RoHS Compliant General Description This N-Channel MOSFET is producedusing Fairchild Semiconductor’. |
| Part Number | FDP2614 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220 packaging ·Drain Source Voltage-
: VDSS ≥ 200V ·Static drain-source on-resistance:
RDS(on) ≤ 27mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to.
*With TO-220 packaging *Drain Source Voltage- : VDSS ≥ 200V *Static drain-source on-resistance: RDS(on) ≤ 27mΩ@VGS=10V *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Power supply *Switching applications *ABSOLUTE MAXIMUM RA. |
| Seller | Inventory | Price Breaks | Buy |
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