Datasheet4U Logo Datasheet4U.com

FDP3632 Datasheet

The FDP3632 is a 100V 80A N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberFDP3632
Manufactureronsemi
Overview DATA SHEET MOSFET – Power, N-Channel, POWERTRENCH) VDSS 100 V RDS(ON) MAX 9 mW ID MAX 80 A 100 V, 80 A, 9 mW D FDH3632, FDP3632, FDB3632 Features • RDS(ON) = 7.5 mW (Typ.), VGS .
* RDS(ON) = 7.5 mW (Typ.), VGS = 10 V, ID = 80 A
* Qg (tot) = 84 nC (Typ.), VGS = 10 V
* Low Miller Charge
* Low Qrr Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* These Devices are Pb−Free and are RoHS Compliant Applications
* Synchronous Rectification
* Battery Protection Circui.
Part NumberFDP3632
DescriptionN-Channel MOSFET
ManufacturerFairchild Semiconductor
Overview FDB3632 / FDP3632 / FDI3632 April 2003 FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ Features • r DS(ON) = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS .
* r DS(ON) = 7.5mΩ (Typ.), V GS = 10V, ID = 80A
* Qg(tot) = 84nC (Typ.), VGS = 10V
* Low Miller Charge
* Low QRR Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101 Formerly developmental type 82784 Applications
* DC/DC converters and Off-Line UPS
* Distributed P.
Part NumberFDP3632
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥100V ·Static drain-source on-resistance: RDS(on) ≤ 9mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-L.
*With TO-220 packaging
*Drain Source Voltage- : VDSS ≥100V
*Static drain-source on-resistance: RDS(on) ≤ 9mΩ@VGS=10V
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Power supply
*Switching applications
*ABSOLUTE MAXIMUM RATI.