FDP8870 Datasheet and Specifications PDF

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 30V ·Static drain-source on-resistance: RDS(on) ≤ 41mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-.

*With TO-220 packaging
*Drain Source Voltage- : VDSS ≥ 30V
*Static drain-source on-resistance: RDS(on) ≤ 41mΩ@VGS=10V
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Power supply
*Switching applications
*ABSOLUTE MAXIMUM RAT.

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for.

* rDS(ON) = 4.1mΩ, VGS = 10V, ID = 35A
* rDS(ON) = 4.6mΩ, VGS = 4.5V, ID = 35A
* High performance trench technology for extremely low rDS(ON)
* Low gate charge
* High power and current handling capability
* RoHS Compliant (FLANGE) DRAIN SOURCE DRAIN GATE G TO-220AB FDP SERIES MOSFET Maximum Ra.