FDT457N Datasheet

The FDT457N is a N-Channel MOSFET.

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Part NumberFDT457N
Manufactureronsemi
Overview These N−Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mi.
* 5 A, 30 V RDS(on) = 0.06 W @ VGS = 10 V RDS(on) = 0.090 W @ VGS = 4.5 V
* High Density Cell Design for Extremely Low RDS(ON)
* High Power and Current Handling Capability in a Widely Used Surface Mount Package
* This Device is Pb
*Free ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Sy.
Part NumberFDT457N
DescriptionN-Channel MOSFET
ManufacturerFairchild Semiconductor
Overview These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to. 5 A, 30 V. RDS(ON) = 0.06 Ω @ VGS = 10 V RDS(ON) = 0.090 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D D D S D SOT-223 .
Part NumberFDT457N
DescriptionN-Channel MOSFET
ManufacturerKexin Semiconductor
Overview SMD Type N-Channel MOSFET FDT457N TraMnOsiSsFtoErsT Ƶ Features ƽ 5 A, 30 V. RDS(ON) = 0.06 ȍ @ VGS = 10 V RDS(ON) = 0.09 ȍ @ VGS = 4.5 V. ƽ High density cell design for extremely low RDS(ON). ƽ Hig. ƽ 5 A, 30 V. RDS(ON) = 0.06 ȍ @ VGS = 10 V RDS(ON) = 0.09 ȍ @ VGS = 4.5 V. ƽ High density cell design for extremely low RDS(ON). ƽ High power and current handling capability in a widely used surface mount package. SOT-223 6.50±0.2 3.00±0.1 4 10b Unit:mm 7.0±0.3 3.50±0.2 0.75 (min) 1 2 3 D .