| Part Number | FDU8896 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for.
* rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A * rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A * High performance trench technology for extremely low rDS(ON) * Low gate charge * High power and current handling capability D G S DTO-P-2A5K2 (TO-252) GDS I-PAK (TO-251AA) MOSFET Maximum Ratings TC = 25°C unless oth. |
FDU8896 Datasheet and Specifications PDF
The FDU8896 is a N-Channel Power MOSFET.
Key Specifications
| Package | TO-251-3 |
|---|---|
| Mount Type | Through Hole |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | FDU8896 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for.
* rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A * rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A * High performance trench technology for extremely low rDS(ON) * Low gate charge * High power and current handling capability D G S DTO-P-2A5K2 (TO-252) GDS I-PAK (TO-251AA) MOSFET Maximum Ratings TC = 25°C unless oth. |