FJA4210 Datasheet and Specifications PDF

The FJA4210 is a PNP Epitaxial Silicon Transistor.

Key Specifications

Mount TypeThrough Hole
Pins3
Max Frequency30 MHz
Height20.1 mm
Length15.8 mm
Width5 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part NumberFJA4210 Datasheet
ManufacturerFairchild Semiconductor
Overview FJA4210 — PNP Epitaxial Silicon Transistor FJA4210 PNP Epitaxial Silicon Transistor • Audio Power Amplifier • High Current Capability : IC= -10A • High Power Dissipation • Wide S.O.A • Complement to . itter Saturation Voltage Cob Output Capacitance fT Current Gain Bandwidth Product * Pulse Test: Pulse Width£300ms, Duty Cycle£2% IC=-5mA, IE=0 IC=-50mA, RBE=
* IE=-5mA, IC=0 VCB=-200V, IE=0 VEB=-6V, IC=0 VCE=-4V, IC=-3A IC=-5A, IB=-0.5A VCB=-10V, f=1MHz VCE=-5V, IC=-1A hFE Classification Class.
Part NumberFJA4210 Datasheet
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·DC Current Gain- : hFE= 50(Min)@ IC= -3A ·Complement to Type FJA4310 ·Minimum Lot-to-Lot variations for robust device performance and reli. ase Breakdown Voltage IC= -5mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -200V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -3A; VCE= -4.

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