| Part Number | FJP13009 Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
The FJP13009 is a 700 V, 12 A NPN silicon epitaxial planar transistor. The FJP13009 is available with multiple hFE bin classes for ease of design use. The FJP13009 is designed for high speed switching.
* High-Voltage Capability * High Switching Speed Applications * Electronic Ballast * Switching Regulator * Motor Control * Switched Mode Power Supply Description The FJP13009 is a 700 V, 12 A NPN silicon epitaxial planar transistor. The FJP13009 is available with multiple hFE bin classes for ease o. |
FJP13009 Datasheet and Specifications PDF
The FJP13009 is a High-Voltage Fast-Switching NPN Power Transistor.
Key Specifications
| Package | TO-220 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 9.2 mm |
| Length | 9.9 mm |
| Width | 4.5 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | FJP13009 Datasheet |
|---|---|
| Description | Silicon NPN Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable. ICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.25 UNIT ℃/W isc Website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitt. |