FKP330C Datasheet and Specifications PDF

N-Channel MOS FET FKP330C July. 2007 ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy guarantee ■Package---FM100 (TO-3P Full Mold) ■Applications ●PDP driving ●High speed swit.

*Low on-resistance
*Low input capacitance
*Avalanche energy guarantee
*Package
*-FM100 (TO-3P Full Mold)
*Applications
*PDP driving
*High speed switching
*Equivalent circuit Designs New G (1) D (2) for S (3) ded
*Absolute maximum ratings men Characteristic Drain to Source Voltage om Gate to S.

·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 330 V VGS Gate-Source.

*Drain Current
*ID=30A@ TC=25℃
*Drain Source Voltage- : VDSS=330V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 63mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplies and .