FMH07N90E Datasheet and Specifications PDF

The FMH07N90E is a N-CHANNEL SILICON POWER MOSFET.

Key Specifications

Max Operating Temp150 °C
Part NumberFMH07N90E Datasheet
ManufacturerFuji Electric
Overview Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum. Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFE.
Part NumberFMH07N90E Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor FMH07N90E ·FEATURES ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max) ·Fast Switching ·M.
*Drain Current ID= 7A@ TC=25℃
*Drain Source Voltage- : VDSS= 900V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max)
*Fast Switching
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Switching regulators
*UPS (Uninterruptible Power Supply).

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