The FMV16N50E is a N-CHANNEL SILICON POWER MOSFET.
| Max Operating Temp | 150 °C |
|---|
Fuji Electric
Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximu.
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSF.
Fuji Electric
Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximu.
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSF.
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Win Source | 2140 | 1+ : 63.2028 USD 3+ : 51.8595 USD 4+ : 50.239 USD 5+ : 48.6174 USD |
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| Anlinkda | 270 | 1+ : 12.248 USD 10+ : 10.97 USD 100+ : 9.394 USD 1000+ : 9.208 USD |
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| RC Electronics | 248 | 1+ : 12.301 USD 10+ : 11.183 USD 100+ : 9.576 USD 1000+ : 9.387 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| FMV16N50ES | Fuji Electric | N-CHANNEL SILICON POWER MOSFET |